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| SUR70N02-04P New Product Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0037 @ VGS = 10 V 0.0061 @ VGS = 4.5 V ID (A)a 37 29 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D Synchronous Buck Converter - Low Side D Synchronous Rectifier - Secondary Rectifier TO-252 Reverse Lead DPAK D Drain Connected to Tab G D S G Top View Ordering Information: SUR70N02-04P--E3 SUR70N02-04P-T4--E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TC = 25_C TA = 25_C TC= 25_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 "20 37a 70b 100 37 30 45 8.3a 93 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72776 S-32697--Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.3 Maximum 18 50 1.6 Unit _C/W C/W 1 SUR70N02-04P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 15 0.0047 50 0.0028 0.0037 0.0052 0.0061 S W 20 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A 0.5 VGS = 0 V, VDS = 10 V, f = 1 MHz 4500 1520 800 1.1 34 11 10 15 11 35 15 25 20 55 25 ns 1.8 153 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 45 100 1.5 90 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 140 120 I D - Drain Current (A) 100 80 60 40 20 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 3V VGS = 10 thru 4 V I D - Drain Current (A) 100 80 60 40 20 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = 125_C 25_C -55_C 3.0 3.5 4.0 140 120 Transfer Characteristics VGS - Gate-to-Source Voltage (V) Document Number: 72776 S-32697--Rev. A, 19-Jan-04 2 SUR70N02-04P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 120 TC = -55_C r DS(on)- On-Resistance ( W ) 100 g fs - Transconductance (S) 80 60 40 20 0 0 10 20 30 40 50 25_C 125_C 0.006 0.005 0.004 0.003 0.002 0.001 0.000 0 20 40 60 80 100 VGS = 10 V VGS = 4.5 V 0.007 Vishay Siliconix On-Resistance vs. Drain Current ID - Drain Current (A) 6000 5000 C - Capacitance (pF) 4000 3000 2000 Crss 1000 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Coss ID - Drain Current (A) 10 VDS = 10 V ID = 50 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) Ciss 8 6 4 2 0 0 15 30 45 60 75 Qg - Total Gate Charge (nC) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on)- On-Resistance ( W ) (Normalized) 1.4 TJ = 150_C TJ = 25_C 10 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72776 S-32697--Rev. A, 19-Jan-04 www.vishay.com 3 SUR70N02-04P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 40 New Product 1000 Limited by rDS(on) 100 I D - Drain Current (A) Safe Operating Area 32 I D - Drain Current (A) 10, 100 ms 1 ms 10 ms 100 ms 1s 10 s 100 s dc 24 10 16 1 8 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72776 S-32697--Rev. A, 19-Jan-04 |
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